Q60215-Y62 Overview
+ 125 260 Einheit Unit °C °C Top; Fotoempfindlichkeit Wavelength of max.
| Part number | Q60215-Y62 |
|---|---|
| Datasheet | Q60215-Y62_SiemensSemiconductorGroup.pdf |
| File Size | 333.40 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
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+ 125 260 Einheit Unit °C °C Top; Fotoempfindlichkeit Wavelength of max.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q60215-Y63-S1 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y65 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y66 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y67 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y111-S4 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y111-S5 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y1111 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1112 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1113 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60217-Y20 | PNP THYRISTOR TETRODE |