Datasheet Details
| Part number | Q60215-Y62 |
|---|---|
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| File Size | 333.40 KB |
| Description | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Datasheet |
 Q60215-Y62 Datasheet
|
|
|
| Part number | Q60215-Y62 |
|---|---|
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| File Size | 333.40 KB |
| Description | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Datasheet |
Q60215-Y62 Datasheet
|
|
|
|
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 °C Total power dissipation
BPY 62 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPY 62 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet für Anwendungen.
| Part Number | Description |
|---|---|
| Q60215-Y63-S1 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y65 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y66 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y67 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y111-S4 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y111-S5 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y1111 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1112 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1113 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60217-Y20 | PNP THYRISTOR TETRODE |